Low Pressure Chemical Vapour Deposition at Quasi- High Flow
نویسنده
چکیده
A new chemical vapour deposition (CVD) technique is presented. It is especially advantageous for the deposition of compound materials. The technique improves the uniformity and reproducibility of the deposition. The economical use of gaseous reactants is improved by a factor varying between 5 and 20. This is important in the case of expensive metal-organic CVD methods. The method consists in the manifold repetition of the following sequence: evacuation, filling and deposition in a horizontal tube reactor. The filling time of 50ms is short compared with the deposition period of 1 s. The advantages of the method are demonstrated with results for the deposition of undoped, phosphorus-doped and boron-doped silicon and SiOZ.
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